PART |
Description |
Maker |
BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLL1214-250 |
L-band radar LDMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BLS7G2729L-350P BLS7G2729LS-350P |
LDMOS S-Band radar power transistor BLS7G2729LS-350P<SOT539B (SOT539B)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLS7G2729L-350P-15 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell Renesas Electronics Corporation
|
AM82731-050 2770 |
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管) From old datasheet system S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
STMicroelectronics ST Microelectronics SGS Thomson Microelectronics
|
2731-100M |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz S BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp. MICROSEMI POWER PRODUCTS GROUP
|
AM1214-175 2705 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS From old datasheet system RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
BLC6G22-100 BLC6G22LS-100 BLC6G22-130 |
UHF power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|